Damage production at the surface of Si single crystals by 200 keV He+bombardment

With the channeling technique damage build-up at the surface of silicon single crystals by 200 keV He+ irradiation is studied. To investigate the role of diffusion of defects to the surface, traps were created in the bulk by doping samples with impurities (As and B) known to form complexes with point defects or by creating a buried damaged layer by N+ implantation. In all cases the initial damage introduction rate at the surface was equal to that for undoped samples. Therefore we conclude that for surface atom displacement the role of diffusion of defects to the surface is insignificant.