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A new model for ion-induced crystallization and amorphization at the interface is presented. The model is based on the general concept for ion-induced processes between two solid phases with different free energies; the presence of pure ballistic and thermally enhanced processes. The parameters that can fit quantitatively to the temperature, flux, and stopping power dependencies of crystallization/amorphization rates for Si are obtained.
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Wang et al. (1994) studied this question.
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