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The design and fabrication of a high‐efficiency inverse class‐F power amplifier using a 10‐W gallium nitride (GaN) high‐electron mobility transistor at 1 GHz is presented. The output load network has been used to control harmonic components for high‐efficiency operation. The measurement results show that power‐added efficiency of 74.2%, drain efficiency of 77.5%, and gain of 13.7 dB at an output power of 39.8 dBm for a continuous wave signal.
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Kim et al. (2008) studied this question.
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