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Etching characteristics of some positive working resists by means of ultraviolet light irradiation were evaluated. Degradable resist polymers were found to be etched effectively in a room atmosphere and at a comparatively low temperature. The pure PMIPK [poly (methyl isopropenyl ketone)] showed that the greatest etching rate and fine resist patterns could be obtained directly by the UV-etching method. It is pointed out that the UV-etching method can be applied, as the simplest dry method, to making resist patterns as well as to ashing the resists.
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Ueno et al. (1981) studied this question.
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