Experimental investigation demonstrates synchronous source and bias pulsing in inductively coupled plasma, suggesting improved control for reliable semiconductor gate etching.
Synchronous Pulse Plasma Operation upon Source and Bias Radio Frequencys for Inductively Coupled Plasma for Highly Reliable Gate Etching Technology, Tokashiki, Ken, Cho, Hong, Banna, Samer, Lee, Jeong-Yun, Shin, Kyoungsub, Todorow, Valentin, Kim, Woo-Seok, Bai, KeunHee, Joo, Sukho, Choe, Jeong-Dong, Ramaswamy, Kartik, Agarwal, Ankur, Rauf, Shahid, Collins, Ken, Choi, SangJun, Cho, Han, Kim, Hyun Joong, Lee, Changhun, Lymberopoulos, Dimitris, Yoon, Junho, Han, Woosung, Moon, Joo-Tae
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Tokashiki et al. (2009) studied this question.
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