Calculation of Surface Charge Noise at the Si-SiO2 Interface

A theoretial analysis of the surface charge noise at the Si-SiO2 interface is presented. The interface state charge spectral density is evaluated as a function of the interface state conductance associated with the energy dissipation due to the electronic exchanges into the interface state reservoir. The interface charge noise spectrum is investigated using different electrical models of the Si-SiO2 interface. Moreover, a compact formulation of the drain current spectral density both for enhanced and depletion mode MOSFETs is established. It allows a complete analysis of the frequency, gate bias, and temperature dependence of the noise spectrum characteristics of an MOS transistor.