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April 30, 2002Japanese Journal of Applied PhysicsOpen Access

Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Field-Effect-Transistors with Direct Tunneling Current

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Authors

STShinichi TakagiThe Open University of JapanMTMariko TakayanagiBibliothèque Nationale de France

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Takagi et al. (2002) studied this question.

synapsesocial.com/papers/6a93aa04a7f1ce3a0eafcedehttps://doi.org/10.1143/jjap.41.2348
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