What question did this study set out to answer?

Determine the heat of crystallization, solid-phase crystal growth velocity, and melting temperature of amorphous silicon.

April 15, 1983Applied Physics Letters

Heat of crystallization and melting point of amorphous silicon

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Authors

EDE. P. DonovanUniversity of South Carolina Upstate FSF. SpaepenHarvard University DTDavid TurnbullThe University of Queensland

Discussion

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Implication

Experimental calorimetry reveals a crystallization enthalpy of 11.9 kJ/mol and melting point of 1420 K in amorphous silicon, indicating lower thermodynamic values than previously modeled.

Key Points

Determine the heat of crystallization, solid-phase crystal growth velocity, and melting temperature of amorphous silicon.
Produced thin amorphous silicon layers via noble gas ion implantation into (100) substrates maintained at 77 K.
Evaluated crystallization thermodynamics and structural transitions using differential scanning calorimetry along with Rutherford backscattering and channeling spectrometry.
Measured the heat of crystallization (ΔHac) to be 11.9 ± 0.7 kJ/mol, substantially lower than theoretical values scaled from amorphous germanium.
Identified a crystal growth velocity governed by v = v0 exp(−2.24 eV/kT), providing a revised melting temperature estimate of 1420 K for amorphous silicon.

Cite This Study

Donovan et al. (1983) studied this question.

synapsesocial.com/papers/6a93b21050daee6a3ee1c81e https://doi.org/10.1063/1.94077

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April 15, 1983Applied Physics Letters

Heat of crystallization and melting point of amorphous silicon

View Full Paper

Ask AI

Bookmark

Authors

EDE. P. DonovanUniversity of South Carolina Upstate FSF. SpaepenHarvard University DTDavid TurnbullThe University of Queensland

Discussion

Member takes

Implication

Experimental calorimetry reveals a crystallization enthalpy of 11.9 kJ/mol and melting point of 1420 K in amorphous silicon, indicating lower thermodynamic values than previously modeled.

Key Points

Determine the heat of crystallization, solid-phase crystal growth velocity, and melting temperature of amorphous silicon.
Produced thin amorphous silicon layers via noble gas ion implantation into (100) substrates maintained at 77 K.
Evaluated crystallization thermodynamics and structural transitions using differential scanning calorimetry along with Rutherford backscattering and channeling spectrometry.
Measured the heat of crystallization (ΔHac) to be 11.9 ± 0.7 kJ/mol, substantially lower than theoretical values scaled from amorphous germanium.
Identified a crystal growth velocity governed by v = v0 exp(−2.24 eV/kT), providing a revised melting temperature estimate of 1420 K for amorphous silicon.

Cite This Study

Donovan et al. (1983) studied this question.

synapsesocial.com/papers/6a93b21050daee6a3ee1c81e https://doi.org/10.1063/1.94077

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