The twining of alternative-current (AC) with electrochemical etching (ECE) to fabricate porous silicon (PS) is studied. The porosity percentage is obtained by gravimetric analysis. The effect of different current densities; 20, 25 and 30 mA/cm2 at 30 min on morphology and electrical properties of PS have been investigated. The electrical properties of I-V characteristics, Schottky barrier height, photoresponse and resposivity of PS are analyzed. The quantum efficiency is measured under different current densities. The obtained results showed quite distinguished results for best performance of photodetectors.
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Al‐Douri et al. (2013) studied this question.
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