We demonstrate an easy implementation of the cantilever bending beam approach to measure stress during film growth in ultrahigh vacuum. Using a simple and compact optical deflection technique, film stress with sub-monolayer sensitivity can be detected. A stress measurement during FeSi2 formation on Si(111) is presented.
No takes yet. Share an insight, caveat, or question.
Sander et al. (1995) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: