Modeling of dopant diffusion in silicon: An effective diffusivity approach including point-defect couplings

We present a simplified model for dopant diffusion in silicon in the presence of nonequilibrium point defects. In this model, the dopant flux is expressed with an effective diffusivity, taking into account the various couplings arising from the presence of the defect gradients. The point-defect concentrations are calculated by the resolution of the corresponding continuity equations. This model allows fast and accurate simulations for the usual dopants (P, As, and B), and it is thus well adapted for use as a process-simulation tool.