Grain growth of rapid quenching high silicon-iron alloys

In 6.5wt% silicon-iron ribbons prepared by a rapid quenching roll method, grains of 10μm in diameter were observed to grow from surfaces to the inner part of ribbons. When the annealing temperature was about 700°C, the primary recrystallization was observed near the middle of the ribbon thickness, and at the annealing temperature of 950°C, the grain size became 30-40μm. When ribbons were annealed at 1100°C, grains grew with a (100) crystal plane parallel to the ribbon surface, and after 30 minutes annealing, all of the ribbon surface was covered with these grains.