Optical and electrical properties of GaAs light-emitting diodes grown on Si substrates by a hybrid method of molecular beam and liquid phase epitaxies

Light-emitting diodes (LEDs) have been fabricated on GaAs-on-Si substrates grown by a hybrid method which combines molecular beam epitaxy (MBE) and liquid phase epitaxy. The LEDs had a low reverse leakage current and high stability of light intensity for an aging operation compared with MBE-grown LEDs. These results are attributed to a higher crystallinity in the hybrid-grown GaAs layers on Si substrates.