BeTe/ZnSe graded band gap ohmic contacts to p-ZnSe

BeTe is not a very well known wide-band semiconductor. Due to the close lattice match to GaAs and ZnSe and p-type as-grown character, BexZn1−xTexSe1−x graded band-gap layers appear an ideal candidate for ohmic contact to p-type ZnSe based semiconductors. These contacts allow for an implementation of epitaxial structures of II-VI compound diode lasers entirely lattice matched to the GaAs substrate. The numerical calculations predict contact resistivity of BexZn1−xTexSe1−x graded gap contacts lower than ρc=10−4 Ω cm2 at acceptor doping level 1×1018 cm−3, which corresponds to a voltage drop across the contact layer of less than 0.1 V during lasing operation.