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April 1, 1983Journal of Applied Physics

Lateral growth of titanium silicide over a silicon dioxide layer

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PRPéter RévészUniversity of Nebraska–LincolnJGJ. GyimesiCollege of the Holy CrossLPL. PogányHUN-REN Wigner Research Centre for Physics

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Révész et al. (1983) studied this question.

synapsesocial.com/papers/6a93f7aed3a1effb396d0da4https://doi.org/10.1063/1.332265
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Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Thin film interaction between titanium and polycrystalline silicon1980 · 191 citations
  2. 2Lateral diffusion of Ni and Si through Ni2Si in Ni/Si couples1982 · 59 citations
  3. 3Silicide formation in thin cosputtered (titanium + silicon) films on polycrystalline silicon and SiO2.1980 · 131 citations
  4. 4Growth Kinetics Observed in the Formation of Metal Silicides on Silicon1972 · 179 citations