Radiation-enhanced diffusion of oxygen in silicon at room temperature

Rectangular bars of silicon containing oxygen impurity have been cut with the long axis parallel to a (111) crystal direction. The bars were stressed at 450 degrees C and measurements made of the resulting dichroism of the 9 mu m oxygen band following: (a) isothermal anneals at 350, 370 and 390 degrees C; and (b) successive doses of electron irradiation up to a total dose of 1.1*10 19 cm -2 with the samples at room temperature. The authors' diffusion data agree with other current work and they observe radiation-enhanced diffusion corresponding to D=10 -21 cm 2 s -1 at 300K.