Indium-phosphide-based double heterojunction bipolar transistors having lateral and sidewall collector Schottky contacts are presented. The lateral collector structure reduces the base-collector fringing capacitance and can potentially enhance the high-frequency performance of the device. The fabrication process of the devices is described in detail.
No takes yet. Share an insight, caveat, or question.
Cohen-Elias et al. (2012) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: