A multiwavelength laser array has been obtained through growth on patterned InP substrates using chemical beam epitaxy. This technique makes use of interfacet migration of reactant species to obtained compositional and/or thickness variation with position on a set of patterned ridges. Results obtained on 〈100〉 InP substrates with prepatterned ridges of various sizes oriented in the 〈011〉 direction are presented. A variation in lasing wavelength from 1560 to 1582 nm is obtained from lasers processed on ridges with different sizes.
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Kapre et al. (1993) studied this question.