GaAs corrugation pattern with submicron pitch grown by Ar ion laser-assisted metalorganic molecular beam epitaxy

Epitaxial growth of a GaAs film with a fine pattern is realized by Ar ion laser irradiation during metalorganic molecular beam epitaxy. Corrugation patterns with 0.85 and 4 μm pitch are successfully grown on a GaAs substrate using a holographic interference technique, i.e., irradiation of the interference fringe pattern of two laser beams. The cross-section profile of the pattern is similar to a sinusoidal curve, expected from laser power distribution of interference. Vibration of a substrate during epitaxial growth is discussed comparing obtained pattern height to the theoretical one.