GaAs atomic layer epitaxy is demonstrated in hydride vapor phase epitaxy by a dual-grown-chamber method. GaAs substrate is alternatively exposed to GaCl and As4 gases by transferring the substrate between two chambers. The growth rate was examined for differing growth conditions and was found to depend only on substrate transfer cycles. Furthermore, the present method can be applied to selective growth.
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Usui et al. (1986) studied this question.
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