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April 15, 1993Journal of Applied Physics

Passivation of carbon-doped GaAs layers by hydrogen introduced by annealing and growth ambients

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Authors

DKD. M. KozuchMSMichael StavolaLehigh University
S. J. Pearton
S. J. PeartonUniversity of Stuttgart

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Kozuch et al. (1993) studied this question.

synapsesocial.com/papers/6a93fd69f6576007e0f63aa5https://doi.org/10.1063/1.352902
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  4. 4Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy1988 · 181 citations
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