Atomic Layer Epitaxy of GaAs Using GaCl3 and AsH3

It was demonstrated that the atomic layer epitaxy (ALE) of GaAs could be performed by using GaCl3/H2 and AsH3/H2. The GaCl3 is a powder at room temperature and can be supplied from outside the reactor, and is essentially carbon free. The ALE growth temperature was from 200°C to 500°C. The growth temperature of 200°C is the lowest ever reported in GaAs ALE. The fact that the ALE was performed at 200°C indicates that Ga was supplied as GaCl3, suggesting the possibility of AlGaAs ALE using AlCl3, GaCl3 and AsH3.