The growth of In1-x Ga x As by halogen transport atomic layer epitaxy (ALE) is described. The vapor-solid distribution relation for the group III elements is experimentally obtained. A model which assumes the Langmuir-type adsorption for the group III monochlorides is developed. It is shown that the solid composition grown by halogen transport ALE is determined by the competitive adsorption of GaCl and InCl on the substrate.
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Koukitu et al. (1988) studied this question.
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