Answers are grounded in this paper and cite their sources.
The composition of sputtered films can be altered to give desired ferroelectric properties by firing in an atmosphere containing the elements of the required ferroelectric film. These converted films have the pseudocubic provskite-type structure (a0 = 4.07 Å) and show the ferroelectric characteristics required for memory applications: square hysteresis loops, pulsed switching and retention of polarization.
No takes yet. Share an insight, caveat, or question.
Vogel et al. (1973) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: