The dependence of Si MBE film on growth temperature is studied by means of reflection high-energy electron diffraction, Rutherford backscattering and Auger electron spectroscopy. It is found that above 680°C, high-quality epitaxial film can be grown even without intentional preheating by not removing the surface oxide formed during chemical cleaning of the substrate. The surface oxide protects the substrate surface from contamination, and should be removed immediately before growth. In addition, structural imperfections in Si films grown at lower temperatures are observed.
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Tabe et al. (1981) studied this question.
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