The performance of an AlGaN/GaN high electron mobility transistor (HEMT) on diamond substrate is reported. Presented is a device with a gate footprint LG=40 nm and a periphery WG=100 µm that exhibits fT=85 GHz and fmax=95 GHz. It is believed that this represents the best frequency performance of a GaN-on-diamond HEMT.
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Diduck et al. (2009) studied this question.
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