High temperature 10 Gbit/s directly modulated 1.3 µm DFB lasers using InAsP/InGaAsP materials

Uncooled 10 Gbit/s direct modulation of high-power 1.3 µm InAsP/InGaAsP directly modulated multiple quantum well distributed feedback (DFB) lasers is demonstrated. High resonant frequencies and high efficiency at 85°C are obtained due to the high epitaxial quality of ternary, aluminium-free, quantum wells. Floor-free transmission on 90 and 140 ps/nm within ITU recommendations are demonstrated.