Characterizations of Metal-Oxide-Semiconductor Field-Effect Transistors of ZnGaO Grown on Sapphire Substrate

Zinc gallate (ZnGaO) epilayers were grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition and fabricated into metal-oxide-semiconductor field-effect transistors (MOSFETs). The ZnGaO MOSFETs exhibited a complete channel pinch-off of the drain current for <tex-math notation="LaTeX">VGS <- 4. 43 </tex-math> V, high off-state breakdown voltage of 378 V, high <tex-math notation="LaTeX">ION /IOFF </tex-math> ratio of <tex-math notation="LaTeX">10⁶ </tex-math>, and low gate leakage current.