Mist-CVD Grown Sn-Doped <tex-math notation="LaTeX">α </tex-math>-Ga₂O₃ MESFETs

This paper demonstrates the use of cost-effective solution-processed α-Ga 2 O 3 thin films (TFs) for electronic device applications. MESFETs based on AgO x Schottky diode (SD) gates were fabricated on highly crystalline Sn-doped α-Ga 2 O 3 TFs, grown by mist chemical vapor deposition at atmospheric pressure and a substrate temperature of only 400°C. The rectification ratio and reverse breakdown voltage of typical SDs were 6 × 10 6 and 19.6 V, respectively. The ON-OFF ratio of the corresponding transistors was 2 × 10 7 . The MESFETs that could withstand drain voltages of up to 48 V were also realized.