Logarithmic behavior of the degradation dynamics of metal–oxide–semiconductor devices

In this paper the authors describe a simple theoretical statistical model of the process of relaxation in metal–oxide–semiconductor devices that governs the degradation. Basically, starting from an initial state where a given number of traps are occupied, the dynamics of the relaxation process is measured, and the density of occupied traps and its fluctuations (second moment) as a function of time are calculated. Our theoretical results show an emergent logarithmic behavior for the density of occupied traps: , i.e., the degradation is logarithmic and its amplitude depends only on the temperature and the Fermi level (applied bias voltage) of the device.