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A photothermal method for the determination of very thin GaInAs layer thickness of the InP/GaInAs/InP heterostructure was described. This method was based on the Fernelius’ theoretical model [J. Appl. Phys. 51, 650 (1980)] and derived from the phase measurement of the photothermal signal phase in the vicinity of the InP energy gap.
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Yacoubi et al. (1991) studied this question.
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