The authors report a very high capacitance ratio of ~10:1 for a heterostructure varactor. To realise this, a new InGaAs/AlAs quantum well-barrier scheme has been fabricated in GaAs technology. The capacitance modulation involves carrier dynamics via the quantum well eigenstates in contrast to the conventional depletion operation mode.
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Duez et al. (1998) studied this question.
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