Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
September 1, 1998IEEE Electron Device Letters

Capacitance engineering for InP-based heterostructure barrier varactor

View Full Paper
Ask AI
Bookmark
Share

Authors

ÉLÉric LheuretteXMX. MéliquePMPatrick Mounaix

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Lheurette et al. (1998) studied this question.

synapsesocial.com/papers/6a9439e93fda5c29338c1948https://doi.org/10.1109/55.709634
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1<i>C</i>-<i>V</i> and <i>I</i>-<i>V</i> characteristics of quantum well varactors1992 · 33 citations
  2. 2Resonant tunneling structures with local potential perturbations1994 · 18 citations
  3. 3Virtual-surfactant epitaxy of strained InAs/Al0.48In0.52As quantum wells1993 · 28 citations
  4. 4High performance InP-based heterostructure barriervaractors in single and stack configuration1996 · 32 citations
  5. 5Quantum-barrier-varactor diodes for high-efficiency millimetre-wave multipliers1989 · 145 citations