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The frequency capabilities of integrated In0.53Ga0.47As/AlAs resonant tunnelling diodes have been investigated by successfully tracking their resistive cutoff frequencies when the samples are biased in the negative differential conductance region. The devices exhibit extremely high peak current density (Jp = 175 kA/cm2) and very low series resistance (6 × 10-7 Ωcm2) so that submillimetre wave operation can be expected.
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Mounaix et al. (1995) studied this question.
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