A high-frequency diode is proposed for use as a frequency multiplier element in the millimeter- and submillimeter-wavelength regions. The Schottky/2-DEG diode utilizes a Schottky contact along the edge of a two-dimensional electron gas (2-DEG) structure. This geometry allows one to combine a very low series resistance due to the excellent transport properties of the 2-DEG with a high breakdown voltage caused by the 2-D electric field spreading in the depletion region (compared to a 1-D field variation in the conventional Schottky diode). The higher Fermi velocity of the 2-DEG leads to a less severe transit-time limitation of the frequency response.>
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Peatman et al. (1992) studied this question.
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