Quasi-three-dimensional modeling of a novel 2-D MESFET

We present a quasi-three-dimensional method for modeling novel semiconductor devices. The first step of our method is a two-dimensional numerical simulation of the device cross-section under different gate biases. Next, we use the interpolated results of the two-dimensional numerical simulation as input to the analytical theory describing the potential distribution and current in the third dimension. As an example, this method is applied to a novel two-dimensional AlGaAs/InGaAs Metal-Semiconductor Field Effect Transistor (2D MESFET).