Post-hydrogenation anneals of shallow SiGa donors in GaAs indicate that their reactivation rate is enhanced in the presence of an applied electric field. We show that existing data are consistent with the SiGa-H complex being a deep donor dissociating only via its ionized state. The 0/+ level of this deep donor is found to be at EC−0.75 eV. There is no need to appeal to the existence of negatively charged hydrogen to account for the reactivation of SiGa donors.
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Richard A. Morrow (1993) studied this question.
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