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The recovery of the positron lifetime in electron-irradiated GaAs varies with the energy of the irradiation electrons and with the measuring temperature. This recovery occurs in two main stages between 210 and 350 K as well as between 400 and 700 K, which are discussed in terms of the annealing of Ga- and As-vacancies, respectively.
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Würschum et al. (1987) studied this question.
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