Perpendicular electron transport through a two-dimensional electron- gas layer

We analyze the scattering processes of high-energy (approximately 0.3 eV) electrons impinging at normal incidence on a zero-temperature two-dimensional electron gas (2DEG), and derive an expression for the scattering probability. We proceed in calculating the total scattering rate and energy loss of the hot electrons as a function of their energy of incidence. These results are then compared with those of the recent experiments performed on a hot-electron transistor with a 2DEG base. Our calculated base transfer ratio is in good agreement with the measured value.