Memory elements 0.2 microns wide made from multilayer GMR material have been studied experimentally and analytically. When etched into narrow elements, the 12 to 15% material exhibits a memory mode with large outputs of /spl plusmn/8%. Analysis shows that the mode is suitable for multi-megabit die with high performance if yield can be achieved.
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Pohm et al. (1996) studied this question.
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