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May 1, 1986IEEE Transactions on Electron Devices

An analytical and computer-aided model of the AlGaAs/GaAs high electron mobility transistor

Guan‐Wu Wang W.H. Ku

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Abstract

An analytical model for the AlGaAs/GaAs high electron mobility transistor (HEMT) or MODFET has been developed. This model uses a Trofimenkoff-type relation [1] for the electron velocity and electrical field and assumes that the electron velocity saturation inside the two-dimensional electron gas channel cause current saturation. It also takes into account the parasitic conduction in the AlGaAs layer by including a MESFET operation. Based on this model, analytical current-voltage equations suitable for computer simulation have been derived. Calculated results for sub-half-micrometer HEMT's show excellent agreement with measured characteristics.

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Cite This Study

Wang et al. (1986) studied this question.

synapsesocial.com/papers/6a944dd14ec1eb7af13ed3f8 https://doi.org/10.1109/t-ed.1986.22548

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