Low‐Temperature Processing of Ferroelectric Thin Films Compatible with Silicon Integrated Circuit Technology

This is the authors' abstract. We don't add key points for this paper.

Ferroelectric thin films have been fabricated at 723 K by UV-assisted rapid thermal sol–gel processing (see Figure). Films were deposited from inherently photosensitive sol–gel solutions. The low processing temperature makes the integration of these films with silicon semiconductor technology possible.