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We have investigated total ionizing dose (TID) radiation effects in Al₂O₃-gated ultra-thin body In0.7Ga0.3As MOSFETs. A non-monotonic dependence of the threshold voltage(Vₜₕ)on the X-ray radiation dose was observed and analyzed; the accompanying degradation in subthreshold swing (SS) likely is caused by non-uniform trapped charge in the near-interfacial Al₂O₃rather than interface-trap generation. The off-current and gate breakdown voltage were independent of dose up to 6 Mrad(SiO₂). Compared to the InP-free device, the device with an InP barrier is more vulnerable to TID effects in terms ofVₜₕshift, SS, and mobility degradation.
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Sun et al. (2013) studied this question.
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