A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: part II (low frequencies)

In this paper, the Oxide-Trap based on Charge-Pumping (OTCP) extraction method is extended from high frequencies (HFs) to low frequencies (LFs). As a consequence, the LF-OTCP method simultaneously senses both interface-trap and border-trap (switching oxide-trap) in charge-pumping (CP) current (I/sub cp/) measurements. We have found that radiation-induced oxide-trap (/spl Delta/N/sub ot/) is dependent on /spl Delta/V/sub th/ (threshold voltage shift), /spl Delta/I/sub cpm,h/ (augmentation of maximum CP current at high frequencies), and /spl Delta/I/sub cpm,l/ (augmentation of maximum CP current at low frequencies), where /spl Delta/I/sub cpm,h/ is caused by radiation-induced interface-trap increase (/spl Delta/N/sub it/) and /spl Delta/I/sub cpm,l/ by both radiation-induced interface- and border-trap increases (/spl Delta/N/sub it/) and (/spl Delta/N/sub bt/), respectively. We have shown that /spl Delta/I/sub cpm,l/ and /spl Delta/I/sub cpm,h/ can be easily obtained from a vertical shift of the charge-pumping curve at low and high frequencies respectively, and /spl Delta/V/sub th/ from a lateral one.