Switch-level simulation of total dose effects on CMOS VLSI circuits

The effects of radiation exposure on the performance of CMOS integrated circuits are difficult to predict and to simulate due to the bias-dependent device parameter shifts. Simulation methodologies for identification of failure mechanisms and performance estimation are developed. These simulation algorithms are implemented in the PARA simulator for switch-level simulation of radiation effects. Simulation results for test circuits are presented that prove that accurate estimations are possible without CPU-intensive simulation programs.>