Optically tunable millimeter-wave attenuator based on layered structures

This is the authors' abstract. We don't add key points for this paper.

A new type of optically controllable, millimeter-wave (MMW) attenuator based on high-resistivity (high-R) silicon (Si) wafers and a layered structure is developed. A high-R float-zone Si wafer is a lossless dielectric material at microwave frequency without optical excitation. When an Si wafer is optically excited, free carriers are generated, and the Si wafer becomes a lossy dielectric. This property is combined with a layered structure to develop a simple optically tunable MMW attenuator. A more than 20 dB attenuation with a 10% bandwidth of the center frequency is obtained at W-band. The proposed structure is useful for developing low-cost attenuators and switches in the MMW region.