Both horizontal and vertical depth profiles of implanted particles, and the spatial distribution of vacancies and ionization created by them was studied as a function of the implantation angle by means of the binary collision computer code TRIM, for a frequently examined system (100 keV boron in silicon). These predictions were checked experimentally by means of a special nuclear reaction technique with thermal neutrons. In spite of general agreement, some deviations are found for the 2nd and 4th moments.
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Fink et al. (1988) studied this question.
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