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January 1, 1975Proceedings of the IEEE

Effects of tunneling on high-efficiency IMPATT avalanche diodes

M. Chivé E. Constant M. Lefèbvre J. Pribetich

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Abstract

A theoretical and experimental study is presented of the effects of tunnel injection on high-efficiency IMPATT avalanche diodes characterized by a high low-doping profile. Some characteristics usually observed in such high-efficiency IMPATT oscillators are explained, taking into account the effects of tunneling.

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Chivé et al. (1975) studied this question.

synapsesocial.com/papers/6a9453c2e26a777fc42dd16d https://doi.org/10.1109/proc.1975.9838

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