Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surface

Initial stage of InAs pseudomorphic layer transformation (1–3 ML) on GaAs (100) singular surface may result for sequential submonolayer molecular beam epitaxy in formation of a pseudoperiodic array of InAs ‘‘wires’’ along the [001] direction. Complex parquet structures having similar anisotropy are formed on misoriented surface (3° towards [0–11] direction). Increase in growth interruption time after each growth cycle for 2 ML InAs deposited on singular surface results in decomposition of the wires into dots arranged in a 2D square lattice. Intentional substrate misorientation stabilizes the initial ordering effect along [001] and does not change the direction of anisotropy.