Diode-pumped semiconductor disk laser with intracavity frequency doubling using lithium triborate (LBO)

Diode-pumped semiconductor disk lasers, also referred to as vertical external cavity surface-emitting lasers show excellent beam characteristics in combination with high output powers. In this letter, we present a diode-pumped semiconductor disk laser based on the InAlGaAs material system without any additional phosphorus containing layers for strain compensation. We have achieved a near-infrared /spl lambda//spl sim/972-nm laser output power of 0.25 W in the fundamental transverse mode. The disk laser beam has been coupled into a single-mode fiber with a coupling efficiency of >70%. Moreover, we have shown 490-nm blue-green light generation by intracavity frequency doubling using lithium triborate (LBO).